STFW69N65M5 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages

STFW69N65M5
STW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET
in TO-3PF and TO-247 packages
Datasheet − production data
Features
Order codes V_DSS @ T_Jmax R_DS(on) max I_D
STFW69N65M5
STW69N65M5
710 V
< 0.045 Ω 58 A
■ Worldwide best R_DS(on) * area
■ Higher V_DSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
1
3
2
1
TO-3PF
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STFW69N65M5
STW69N65M5
Marking
69N65M5
Package
TO-3PF
TO-247
September 2012
This is information on a product in full production.
Doc ID 022906 Rev 2
Packaging
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