STFW4N150_09 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF

STFW4N150
STP4N150, STW4N150
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type
V_DSS R_DS(on) max I_D
Pw
STFW4N150 1500 V
<7Ω
4 A 63 W
STP4N150 1500 V
<7Ω
4 A 160 W
STW4N150 1500 V
<7Ω
4 A 160 W
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
■ Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R_DS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1. Device summary
Order codes
STFW4N150
STP4N150
STW4N150
Marking
4N150
P4N150
W4N150
3
2
1
TO-220
3
2
1
TO-247
3
2
1
TO-3PF
Figure 1. Internal schematic diagram.
$
'
3
!-V
Package
TO-3PF
TO-220
TO-247
Packaging
Tube
Tube
Tube
July 2009
Doc ID 11262 Rev 9
1/15
www.st.com
15