STFW3N170 Datasheet, PDF (1/12 Pages) STMicroelectronics – TO-3PF for higher creepage between leads

STFW3N170
N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™
Power MOSFET in a TO-3PF package
Datasheet - production data
TO-3PF
3
2
1
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STFW3N170 1700 V
13 Ω
2.6 A 63 W
 Intrinsic capacitances and Qg minimized
 TO-3PF for higher creepage between leads
 High speed switching
 100% avalanche tested
Applications
 Switching applications
Description
This Power MOSFET is designed using the
STMicroelectronics consolidated strip-layout-
based MESH OVERLAY™ process. The result is
a product that matches or improves on the
performance of comparable standard parts from
other manufacturers.
Order code
STFW3N170
Table 1: Device summary
Marking
Package
3N170
TO-3PF
Packing
Tube
September 2015
DocID023985 Rev 3
This is information on a product in full production.
1/12
www.st.com