STFW3N150_10 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF

STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type
V_DSS
STFW3N150
STP3N150
STW3N150
1500 V
1500 V
1500 V
R_DS(on)
max.
<9Ω
<9Ω
<9Ω
I_D P_TOT
2.5 A 63 W
2.5 A 140 W
2.5 A 140 W
■ 100% avalanche tested
■ Intrinsic capacitances and Q_g minimized
■ High speed switching
■ Fully isolated TO-3PF plastic package
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY^TM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R_DS(on) per area, unrivalled gate
charge and switching characteristics.
3
2
1
TO-220
3
2
1
TO-247
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STFW3N150
STP3N150
STW3N150
Marking
3N150
3N150
3N150
Package
TO-3PF
TO-220
TO-247
June 2010
Doc ID 13102 Rev 9
Packaging
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