STFV4N150_08 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

STFV4N150 - STFW4N150
STP4N150 - STW4N150
N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET
TO-220 - TO-220FH - TO-247 - TO-3PF
Features
Type
STFV4N150
STFW4N150 ⁽¹⁾
STP4N150
STW4N150
V_DSS
R_DS(on) max I_D
1500 V
1500 V
1500 V
1500 V
<7Ω
4A
<7Ω
4A
<7Ω
4A
<7Ω
4A
1. All data which refers solely to the TO-3PF package is
preliminary
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic
packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
■ Creepage distance path is > 4 mm for
TO-220FH
3
2
1
TO-220
3
2
1
TO-247
3
2
1
TO-3PF
3
2
1
TO-220FH
Figure 1. Internal schematic diagram.
Application
■ Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R_DS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1. Device summary
Order codes
Marking
STFV4N150
STFW4N150
STP4N150
STW4N150
4N150
4N150
P4N150
W4N150
April 2008
Rev 6
Package
TO-220FH
TO-3PF
TO-220
TO-247
Packaging
Tube
Tube
Tube
Tube
1/16
www.st.com
16