STFV4N150_07 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH™ Power MOSFET

STFV4N150
N-channel 1500V - 5Ω - 4A - TO-220FH
Very high voltage PowerMESH™ Power MOSFET
General features
Type
STFV4N150
V_DSS R_DS(on)
I_D
Pw
1500V <7Ω 4A 40W
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Fully plastic TO-220 package
■ Creepage distance path is > 4mm
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics. The creepage path is
what makes this package unique from TO-220FP.
The creepage distance path between each lead
and between the leads and the heatsink has been
increased to >4.0mm, making this package met
all stringent safety norms in high voltage
applications.
Applications
■ Switching application
Order codes
Part number
STFV4N150
Marking
FV4N150
3
2
1
TO-220FH
Internal schematic diagram
Package
TO-220FH
Packaging
Tube
March 2007
Rev 4
1/13
www.st.com
13