STFV3N150 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET

STFV3N150 , STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
TO-220, TO-220FH, TO-247, TO-3PF
Features
Type
V_DSS R_DS(on) max I_D
Pw
STFV3N150 1500 V
STFW3N150⁽¹⁾ 1500 V
STP3N150 1500 V
STW3N150 1500 V
<9Ω
<9Ω
<9Ω
<9Ω
2.5 A 30 W
2.5 A 83 W
2.5 A 140 W
2.5 A 140 W
1. All data which refers solely to the TO-3PF package is
preliminary
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic
packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
■ Creepage distance path is > 4 mm for
TO-220FH
3
2
1
TO-220
3
2
1
TO-220FH
3
2
1
TO-247
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R_DS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1. Device summary
Order codes
Marking
STFV3N150
STFW3N150
STP3N150
STW3N150
3N150
3N150
3N150
3N150
February 2009
Rev 6
Package
TO-220FH
TO-3PF
TO-220
TO-247
Packaging
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