STFU24N60M2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STFU24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh™ M2
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
3
2
1
TO-220FP
ultra narrow leads
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STFU24N60M2
VDS
600 V
RDS(on) max
0.19 Ω
ID
18 A
 Extremely low gate charge
 Lower RDS(on) x area vs previous generation
 Low gate input resistance
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
 LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(3)
AM15572v1_no_tab
Order code
STFU24N60M2
Table 1: Device summary
Marking
Package
24N60M2
TO-220FP ultra narrow leads
Packing
Tube
September 2015
DocID027630 Rev 2
This is information on a product in full production.
1/12
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