STFU15NM65N Datasheet, PDF (1/12 Pages) STMicroelectronics – Low gate input resistance

STFU15NM65N
N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
3
2
1
TO-220FP
ultra narrow leads
Figure 1: Internal schematic diagram
Features
Order code
STFU15NM65N
VDS
650 V
RDS(on) max
0.38 Ω
ID
12 A
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order code
STFU15NM65N
Table 1: Device summary
Marking
Package
15NM65N
TO-220FP ultra narrow leads
Packaging
Tube
September 2015
DocID027631 Rev 2
This is information on a product in full production.
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