STFI5N95K3 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely large avalanche performance

STFI5N95K3
N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3™
Power MOSFET in I²PAKFP package
Datasheet − production data
Features
123
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
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AM01476v1
Order code V_DS R_DS(on) max I_D P_TOT
STFI5N95K3 950 V
3.5 Ω
4 A 25 W
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
• 100% avalanche tested
• Extremely large avalanche performance
• Gate charge minimized
• Very low intrinsic capacitances
• Zener-protected
Applications
• Switching applications
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
Order code
STFI5N95K3
Table 1. Device summary
Marking
Package
5N95K3
I²PAKFP (TO-281)
Packaging
Tube
May 2013
This is information on a product in full production.
DocID023624 Rev 1
1/13
www.st.com
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