STFI34NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V, 0.092, 31.5 A MDmesh II Power MOSFET in a PAKFP package

STFI34NM60N
N-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFET
in a I²PAKFP package
Datasheet - production data
Features
123
I²PAKFP
Order code V_DSS
STFI34NM60N 600 V
R_DS(on)
0.105 Ω
I_D
31.5 A
P_TOT
40 W
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Order code
STFI34NM60N
Table 1. Device summary
Marking
Packages
34NM60N
I²PAKFP (TO-281)
Packaging
Tube
July 2013
This is information on a product in full production.
DocID022439 Rev 3
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