STFI26NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package

STFI26NM60N
N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET
in I²PAKFP package
Datasheet — production data
Features
Type
STFI26NM60N
V_DSS
600 V
R_DS(on)
max
< 0.165 Ω
I_D
20 A
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
1
2
3
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
$
'
3
3#
Table 1. Device summary
Order codes
STFI26NM60N
Marking
26NM60N
Package
I²PAKFP
(TO-281)
Packaging
Tube
June 2012
This is information on a product in full production.
Doc ID 022495 Rev 2
1/12
www.st.com
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