STFI260N6F6 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STFI260N6F6
N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™
Power MOSFET in I²PAKFP package
Datasheet — preliminary data
Features
Order codes
STFI260N6F6
V_DSS
60 V
R_DS(on) max
< 0.003 Ω
I_D
80 A
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Application
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
12 ₃
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
Marking
STFI260N6F6
260N6F6
Package
I²PAK
(TO-281)
Packaging
Tube
April 2012
Doc ID 023096 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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