STFI24NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – Low input capacitance and gate charge

STFI24NM60N
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET
in a I²PAKFP package
Datasheet − production data
Features
1 ₂₃
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
Order codes V_DS @Tjmax R_DS(on) max. I_D
STFI24NM60N 650 V
0.19 Ω
17 A
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
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Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order code
STFI24NM60N
Table 1. Device summary
Marking
Packages
24NM60N
I²PAKFP (TO-281)
Packaging
Tube
July 2014
This is information on a product in full production.
DocID022440 Rev 3
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