STFI20NM65N Datasheet, PDF (1/12 Pages) STMicroelectronics – Switching applications

STFI20NM65N
N-channel 650 V, 15 A, 0.250 Ω typ., MDmesh™ II
Power MOSFET in a I²PAKFP package
Datasheet - production data
Features
1
2
3
I ²PAKFP (TO-281)
Order code V_DSS @T_jmax
STFI20NM65N 710 V
R_DS(on) max.
0.270 Ω
I_D
15 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6
$0Y
Order code
STFI20NM65N
Table 1. Device summary
Marking
Packages
20NM65N
2
I PAKFP (TO-281)
Packaging
Tube
December 2013
This is information on a product in full production.
DocID025737 Rev 1
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