STFI13NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – Low input capacitance and gate charge

STFI13NM60N
N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET
in I²PAKFP package
Datasheet — production data
Features
Type
V_DSS
R_DS(on)
(@Tjmax) max
I_D
P_TOT
STFI13NM60N 650 V < 0.36 Ω 11 A 25 W
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
1
2
3
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STFI13NM60N
Marking
13NM60N
3
3#
Packages
I²PAKFP
(TO-281)
Packaging
Tube
May 2012
This is information on a product in full production.
Doc ID 018960 Rev 4
1/12
www.st.com
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