STFI13NK60Z Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low intrinsic capacitance

STFI13NK60Z
N-channel 600 V, 0.48 Ω, 13 A, Zener-protected SuperMESH™
Power MOSFET in I²PAKFP package
Datasheet — production data
Features
Order code
V_DSS
R_DS(on)
max
I_D
STFI13NK60Z 600 V <0.55 Ω 13 A
P_TOT
35 W
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ Gate charge minimized
■ Very low intrinsic capacitance
Applications
■ Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
1
2
3
I ²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
Marking
STFI13NK60Z
13NK60Z
Package
I²PAKFP
(TO-281)
Packaging
Tube
March 2012
This is information on a product in full production.
Doc ID 018969 Rev 3
1/13
www.st.com
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