STFI13N80K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low gate charge

STFI13N80K5
N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5
Power MOSFET in an I²PAKFP package
Datasheet - production data
Features
1 ₂₃
I2PAKFP
Figure 1. Internal schematic diagram
D(2)
Order code V_DS
STFI13N80K5 800 V
R_DS(on)
0.45 Ω
I_D
12 A
P_TOT
35 W
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
• Industry’s lowest R_DS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
This very high voltage N-channel Power MOSFET
is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical
structure. The result is a dramatic reduction in on-
resistance and ultra-low gate charge for
applications requiring superior power density and
high efficiency.
Order code
STFI13N80K5
Table 1. Device summary
Marking
Package
13N80K5
I²PAKFP (TO-281)
Packaging
Tube
December 2014
This is information on a product in full production.
DocID027200 Rev 2
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