STFI10NK60Z Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely high dv/dt capability

STFI10NK60Z
N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH™
Power MOSFET in I²PAKFP package
Datasheet — production data
Features
Type
STFI10NK60Z
V_DSS
600 V
R_DS(on)
max
I_D
< 0.75 Ω 10 A
P_TOT
35 W
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
1
2
3
I²PAKFP
(TO-281)
Applications
■ Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
Marking
STFI10NK60Z
10NK60Z
Package
I²PAKFP
(TO-281)
Packaging
Tube
March 2012
This is information on a product in full production.
Doc ID 018968 Rev 3
1/13
www.st.com
13