STFH10N60M2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STFH10N60M2
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2
Power MOSFET in a TO-220FP wide creepage package
Datasheet - production data
Features
Order code
STFH10N60M2
VDS @ TJmax
650 V
RDS(on) max
0.60 Ω
ID
7.5 A
 Extremely low gate charge
FT _{Figure 1: Internal schematic diagram}
A D(2)
DR ^G(1)
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
 Wide creepage distance of 4.25 mm
between the pins
Applications
 Switching applications
 LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
The TO-220FP wide creepage package provides
increased surface insulation for Power MOSFETs
to prevent failure due to arcing, which can occur
in polluted environments.
Order code
STFH10N60M2
S(3)
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
10N60M2
TO-220FP wide creepage
Packing
Tube
August 2016
DocID029418 Rev 3
This is information on a product in full production.
1/12
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