STF9N80K5 Datasheet, PDF (1/16 Pages) STMicroelectronics – Ultra-low gate charge

STF9N80K5,
STFI9N80K5
N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
Features
Order code
STF9N80K5
STFI9N80K5
VDS
800 V
RDS(on) max.
ID
0.90 Ω
7A
TO-220FP
I²PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
 Industry’s lowest R_DS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
G(1)
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
S(3)
AM15572v1_no_tab
density and high efficiency.
Order code
Table 1: Device summary
Marking
Package
Packing
STF9N80K5
STFI9N80K5
9N80K5
TO-220FP
I²PAKFP(TO-281)
Tube
November 2015
DocID028359 Rev 2
This is information on a product in full production.
1/16
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