STF9N60M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Low gate input resistance

STF9N60M2,
STFI9N60M2
N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Q_g
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
3
2
1
TO-220FP
1 ₂₃
I²PAKFP (TO-281)
Features
Order codes
STF9N60M2
STFI9N60M2
V_DS @
T_Jmax
R_DS(on)
max
I_D
650 V 0.78 Ω 5.5 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
Order codes
STF9N60M2
STFI9N60M2
.
Table 1. Device summary
Marking
Package
9N60M2
TO-220FP
I²PAKFP
Packaging
Tube
March 2014
This is information on a product in full production.
DocID024728 Rev 2
1/15
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