STF8NM60ND Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
max
I_D
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
7A
7A
7 A⁽¹⁾
7A
1. Limited only by maximum temperature allowed
■ The worldwide best R_DS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 1
1/17
www.st.com
17