STF7NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK
second generation MDmesh™ Power MOSFET
Features
Order codes
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
V_{DSS @}
T_Jmax
R_DS(on)
max.
I_D
650 V < 0.9 Ω 5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are N-channel Power MOSFETs
realized using the second generation of
MDmesh^TM technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
Marking
7NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
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November 2010
Doc ID 16472 Rev 4
1/17
www.st.com
17