STF7N65M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STF7N65M2
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet - preliminary data
Features
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Order code
STF7N65M2
V_DS
R_DS(on)
max
I_D
650 V 1.15 Ω
5A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, the device exhibits
both low on-resistance and optimized switching
characteristics. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Order code
STF7N65M2
Table 1. Device summary
Marking
Package
7N65M2
TO-220FP
Packaging
Tube
August 2014
DocID026763 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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