STF7N105K5 Datasheet, PDF (1/14 Pages) STMicroelectronics – Ultra-low gate charge

STF7N105K5
N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5
Power MOSFET in TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
V DS RDS(on) max. ID PTOT
STF7N105K5 1050 V
2.0 Ω
4 A 25 W
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STF7N105K5
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
7N105K5
TO-220FP
Packaging
Tube
June 2016
DocID026184 Rev 2
This is information on a product in full production.
1/14
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