STF6N80K5 Datasheet, PDF (1/15 Pages) STMicroelectronics – Ultra low gate charge

STF6N80K5,
STFI6N80K5
N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
3
2
1
TO-220FP
1 ₂₃
I ² PAKFP
Figure 1. Internal schematic diagram
D(2)
Features
Order code
STF6N80K5
STFI6N80K5
V_DS R_DS(on)max I_D
800 V
1.6 Ω
4.5 A
P_TOT
25 W
• Industry’s lowest R_DS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STF6N80K5
STFI6N80K5
Table 1. Device summary
Marking
Package
6N80K5
TO-220FP
I²PAKFP
Packing
Tube
September 2016
This is information on a product in full production.
DocID024664 Rev 4
1/15
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