STF6N65M2 Datasheet, PDF (1/18 Pages) STMicroelectronics – Extremely low gate charge

STF6N65M2, STP6N65M2,
STU6N65M2
N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2
Power MOSFETs in TO-220FP, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3
2
1
TO-220FP
TAB
3
2
1
TO-220
3
2
1
IPAK
Features
Order codes
STF6N65M2
STP6N65M2
STU6N65M2
V_DS R_DS(on) max
I_D
650 V
1.35 Ω
4A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Order codes
STF6N65M2
STP6N65M2
STU6N65M2
Table 1. Device summary
Marking
Package
TO-220FP
6N65M2
TO-220
IPAK
Packaging
Tube
August 2014
DocID026776 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/18
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