STF6N65K3 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

STF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET
in TO-220FP, I²PAKFP, IPAK
Datasheet — production data
Features
Order codes V_DSS R_DS(on) max.
STF6N65K3
STFI6N65K3 650 V < 1.3 Ω
STU6N65K3
I_D
5.4 A
Ptot
30 W
110 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
TAB
3
2
1
TO-220FP
1
2
3
I²PAKFP
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STF6N65K3
STFI6N65K3
STU6N65K3
Marking
6N65K3
Package
TO-220FP
I²PAKFP
IPAK
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 18424 Rev 2
1/16
www.st.com
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