STF6N60M2 Datasheet, PDF (1/18 Pages) STMicroelectronics – Extremely low gate charge

STF6N60M2, STP6N60M2,
STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2
Power MOSFETs in TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
2
1
TO-220FP
TAB
3
2
1
IPAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
, TAB
Features
Order code
STF6N60M2
STP6N60M2
STU6N60M2
V_DS @
T_Jmax
R_DS(on)
max
I_D
650 V 1.2 Ω 4.5 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Order code
STF6N60M2
STP6N60M2
STU6N60M2
Table 1. Device summary
Marking
Package
TO-220FP
6N60M2
TO-220
IPAK
Packing
Tube
October 2015
This is information on a product in full production.
DocID024771 Rev 2
1/18
www.st.com