STF4N62K3 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET

STF4N62K3, STFI4N62K3, STI4N62K3,
STP4N62K3, STU4N62K3
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET
in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages
Datasheet — production data
Features
TAB
Order codes
STF4N62K3
STFI4N62K3
STI4N62K3
STP4N62K3
STU4N62K3
V_DSS R_DS(on) max I_D
620 V < 2 Ω 3.8 A
P_TOT
25 W
25 W
70 W
70 W
70 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
3
2
1
TO-220FP
TAB
1
23
TAB
I²PAKFP
3
2
1
TO-220
12³
I²PAK
3
2
1
IPAK
Figure 1.
Internal schematic diagram
D(2,TAB)
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STF4N62K3
STFI4N62K3
STI4N62K3
STP4N62K3
STU4N62K3
4N62K3
G(1)
S(3)
AM01476v1
Package
TO-220FP
I²PAKFP
I²PAK
TO-220
IPAK
Packaging
Tube
August 2012
This is information on a product in full production.
Doc ID 17548 Rev 4
1/19
www.st.com
19