STF45N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low on-resistance

STF45N10F7
N-channel 100 V, 0.0145 Ω typ., 30 A, STripFET™ VII DeepGATE™
Power MOSFET in a TO-220FP package
Datasheet - production data
3
2
1
TO-220FP
Features
Order code
STF45N10F7
V_DS
100 V
R_DS(on)
max.⁽¹⁾
0.018 Ω
I_D
30 A
P_TOT
25 W
1. @ VGS = 10 V
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
th
This device utilizes the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
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$0Y
Order codes
STF45N10F7
Table 1. Device summary
Marking
Package
45N10F7
TO-220FP
Packaging
Tube
November 2013
This is information on a product in full production.
DocID024005 Rev 3
1/13
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