STF42N60M2-EP Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STF42N60M2-EP,
STFW42N60M2-EP
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP
Power MOSFETs in TO-220FP and TO-3PF packages
Datasheet − production data
Features
Order codes
V_DS @
T_Jmax
R_DS(on)
max
I_D
STF42N60M2-EP
650 V
0.087 Ω 34 A

STFW42N60M2-EP
3
2
1
TO-220FP
TO-3PF



Figure 1. Internal schematic diagram
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• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
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6
AM01476v1
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
Order codes
STF42N60M2-EP
STFW42N60M2-EP
Table 1. Device summary
Marking
Package
42N60M2EP
TO-220FP
TO-3PF
Packaging
Tube
January 2015
DocID027376 Rev 1
1/16
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