 English |
|
|
|
|
|
|
|
| STF40N60M2 Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages | |||
| |||
|
STB40N60M2, STP40N60M2,
STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus⢠low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet â production data
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Features
Order codes VDS @ TJmax RDS(on) max ID
STB40N60M2
STP40N60M2
650 V
0.088 Ω 34 A
STW40N60M2
⢠Extremely low gate charge
⢠Lower RDS(on) x area vs previous generation
⢠Low gate input resistance
⢠100% avalanche tested
⢠Zener-protected
Figure 1. Internal schematic diagram
' 7$%
Applications
⢠Switching applications
⢠LLC converters, resonant converters
Description
*
6
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmeshâ¢
technology: MDmesh II Plus⢠low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB40N60M2
STP40N60M2
STW40N60M2
Table 1. Device summary
Marking
Package
2
D PAK
40N60M2
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2014
This is information on a product in full production.
DocID024932 Rev 3
1/21
www.st.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese