STF34NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V, 0.092 Ω, 29 A MDmesh™ II Power MOSFET TO-220, TO-247, TO-220FP

STF34NM60N
STP34NM60N, STW34NM60N
N-channel 600 V, 0.092 Ω, 29 A MDmesh™ II Power MOSFET
TO-220, TO-247, TO-220FP
Features
Type
STF34NM60N
STP34NM60N
STW34NM60N
V_DSS
600 V
600 V
600 V
R_DS(on)
max.
0.105 Ω
0.105 Ω
0.105 Ω
I_D
29 A
29 A
29 A
P_TOT
40 W
210 W
210 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STF34NM60N
STP34NM60N
STW34NM60N
Marking
34NM60N
3
!-V
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
March 2011
Doc ID 17740 Rev 3
1/17
www.st.com
17