STF34N65M5 Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

STB34N65M5, STI34N65M5,
STP34N65M5, STW34N65M5
N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs
in D²PAK, I²PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
2
3
1
D²PAK
TAB
TAB
12³
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
Features
Order codes V_DS @ T_Jmax
STB34N65M5
STI34N65M5
STP34N65M5
710 V
STW34N65M5
R_DS(on) max
0.11 Ω
I_D
28 A
• Worldwide best R_DS(on) * area
• Higher V_DSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
'
3
!-V
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order codes
STB34N65M5
STI34N65M5
STP34N65M5
STW34N65M5
Table 1. Device summary
Marking
Packages
34N65M5
D²PAK
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID022853 Rev 3
1/22
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