STF32NM50N Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages

STB32NM50N, STF32NM50N,
STP32NM50N, STW32NM50N
N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220, TO-247 packages
Datasheet — production data
Features
Order codes
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
V_DS
R_DS(on)
max.
500 V 0.13 Ω
I_D
P_TOT
22 A
190 W
35 W
190 W
190 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
TAB
2
3
1
D²PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order codes
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
Marking
32NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
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August 2012
This is information on a product in full production.
Doc ID 023436 Rev 1
1/21
www.st.com
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