STF30NM60ND Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode)

STP/F30NM60ND-STW30NM60ND
STB30NM60ND-STI30NM60ND
N-channel 600V - 0.11Ω - 25A TO-220/FP/D²PAK/I²PAK/TO-247
FDmesh™ II Power MOSFET (with fast diode)
Preliminary Data
Features
Type
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
V_DSS
600V
600V
600V
600V
600V
R_DS(on) Max I_D
< 0.13Ω
< 0.13Ω
< 0.13Ω
25A
25A
25A⁽¹⁾
< 0.13Ω 25A
< 0.13Ω 25A
1. Limited only by maximum temperature allowed
■ The world’s best R_DS(on)*in TO-220 amongst
the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
November 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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