STF28N60M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

STF28N60M2,
STFI28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP, I PAKFP packages
Datasheet - production data
Features
3
2
1
TO-220FP
1 ₂₃
I²PAKFP (TO-281)
Figure 1. Internal schematic diagram
AM15572v1
Order codes V_DS @ T_Jmax R_DS(on) max I_D
STF28N60M2
STFI28N60M2
650 V
0.150 Ω 22 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF28N60M2
STFI28N60M2
Table 1. Device summary
Marking
Package
28N60M2
TO-220FP
2
I PAKFP (TO-281)
Packaging
Tube
January 2014
This is information on a product in full production.
DocID025255 Rev 2
1/14
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