STF28N60DM2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STF28N60DM2
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code
STF28N60DM2
VDS @
TJmax.
650 V
RDS(on)
max.
0.16 Ω
ID
PTOT
21 A 30 W
3
2
1
TO-220FP
Figure 1: Internal schematic diagram
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Order code
STF28N60DM2
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
28N60DM2
Package
TO-220FP
Packing
Tube
October 2015
DocID026863 Rev 2
This is information on a product in full production.
1/12
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