STF27N60M2-EP Datasheet, PDF (1/13 Pages) STMicroelectronics – Tailored for very high frequency converters

STF27N60M2-EP
N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP
Power MOSFET in TO-220FP package
Datasheet - production data
Features
Order code
STF27N60M2-EP
V _DS
600 V
R_DS(on) max
0.163 Ω
I_D
20 A
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM15572v1_no_tab
 Extremely low gate charge
 Excellent output capacitance (C_OSS) profile
 Very low turn-off switching losses
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
 Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and an improved vertical structure, these
devices exhibit low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
Order code
STF27N60M2-EP
Table 1: Device summary
Marking
27N60M2EP
Package
TO-220FP
Packing
Tube
January 2016
DocID028863 Rev 1
This is information on a product in full production.
1/13
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