STF26NM60N Datasheet, PDF (1/23 Pages) STMicroelectronics – N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

STB26NM60N, STF26NM60N, STI26NM60N
STP26NM60N, STW26NM60N
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
TAB
Type
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
V_DSS
600 V
600 V
600 V
600 V
600 V
R_DS(on)
max
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
I_D
20 A
20 A
20 A
20 A
20 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
3
2
1
TO-220FP
TAB
12³
I²PAK
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Application
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
Figure 1. Internal schematic diagram
$4!"
'
3
3#
Table 1. Device summary
Order codes
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
Marking
26NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
June 2012
This is information on a product in full production.
Doc ID 15642 Rev 5
1/23
www.st.com
23