STF24NM60N Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET

STF24NM60N, STI24NM60N
STP24NM60N, STW24NM60N
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
TO-220FP, I²PAK, TO-220 and TO-247
Features
Order codes
STF24NM60N
STI24NM60N
STP24NM60N
STW24NM60N
V_DSS
(@Tjmax)
650 V
650 V
650 V
650 V
R_DS(on)
max.
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
I_D
17 A
17 A
17 A
17 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-220FP
TAB
12³
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$OR4!"
'
3
Table 1. Device summary
Order codes
STF24NM60N
STI24NM60N
STP24NM60N
STW24NM60N
Marking
24NM60N
Package
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tube
August 2011
Doc ID 18047 Rev 3
1/19
www.st.com
19