STF24N60M2 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

STF24N60M2, STFI24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Q_g
Power MOSFET in TO-220FP and I²PAKFP packages
Datasheet − production data
Features
3
2
1
TO-220FP
123
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Order codes
STF24N60M2
STFI24N60M2
V_DS @ T_Jmax
650 V
R_DS(on) max I_D
0.19 Ω 18 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF24N60M2
STFI24N60M2
Table 1. Device summary
Marking
Package
24N60M2
TO-220FP
I²PAKFP (TO-281)
Packaging
Tube
May 2013
This is information on a product in full production.
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