STF24N60DM2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STF24N60DM2
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet − production data
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
Features
Order code
STF24N60DM2
V_DS @
T_Jmax
650 V
R_DS(on)
max
0.20 Ω
I_D
18 A
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh DM2 fast recovery diode
series. It offers very low recovery charge and time
(Q_rr, t_rr) combined with low R_DS(on), rendering it
suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STF24N60DM2
Table 1. Device summary
Marking
Package
24N60DM2
TO-220FP
Packaging
Tube
March 2015
This is information on a product in full production.
DocID025498 Rev 4
1/13
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