STF23N80K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low gate charge

STF23N80K5
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code
STF23N80K5
VDS
800 V
RDS(on) max.
0.28 Ω
ID
16 A
PTOT
35 W
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STF23N80K5
Table 1: Device summary
Marking
Package
23N80K5
TO-220FP
Packing
Tube
August 2015
DocID028292 Rev 1
This is information on a product in full production.
1/13
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