STF22NM60ND Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate charge and input capacitance

STF22NM60ND
Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
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Order code
STF22NM60ND
V_{DS @}
T_Jmax
650 V
R_DS(on)
max
0.22 Ω
I_D
17 A
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• High dv/dt ruggedness
Applications
• Switching applications
Description
This FDmesh™ II Power MOSFET with fast-
recovery body diode is produced using
MDmesh™ II technology. Utilizing a new strip-
layout vertical structure, this device features low
on-resistance and superior switching
performance. It is ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STF22NM60ND
Table 1. Device summary
Marking
Package
22NM60ND
TO-220FP
Packing
Tube
August 2015
This is information on a product in full production.
DocID026895 Rev 2
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