STF19NM65N Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STF19NM65N-STI19NM65N-STW19NM65N
STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D²/I²PAK-TO-247
second generation MDmesh™ Power MOSFET
Features
Type
STB19NM65N
STF19NM65N
STI19NM65N
STP19NM65N
STW19NM65N
V_DSS
(@T_jmax)
710 V
710 V
710 V
710 V
710 V
R_DS(on) max
I_D
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
15.5 A
15.5 A⁽¹⁾
15.5 A
15.5 A
15.5 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STI19NM65N
STF19NM65N
STP19NM65N
STB19NM65NT4
STW19NM65N
Marking
19NM65N
19NM65N
19NM65N
19NM65N
19NM65N
Package
I²PAK
TO-220FP
TO-220
D²PAK
TO-247
Packaging
Tube
Tube
Tube
Tape and reel
Tube
February 2008
Rev 1
1/19
www.st.com
19