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STF19NM50N Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
STF19NM50N
STP19NM50N, STW19NM50N
N-channel 500 V, 0.2 Ω, 14 A MDmesh™ II Power MOSFET
in TO-220FP, TO-220 and TO-247
Features
Type
STF19NM50N
STP19NM50N
STW19NM50N
VDSS @
TJmax
RDS(on)
max
ID
550 V < 0.25 Ω 14 A
■ 100% avalanche tested
■ Low input capacitances and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This second generation of MDmesh™ technology,
applies the benefits of the multiple drain process
to STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
high dv/dt capability and excellent avalanche
characteristics.
TO-247
3
2
1
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STF19NM50N
STP19NM50N
STW19NM50N
Marking
19NM50N
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
February 2010
Doc ID 17079 Rev 1
1/15
www.st.com
15