STF18N65M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STF18N65M2
N-channel 650 V, 0.275 Ω typ., 12 A MDmesh ™ M2
Power MOSFET in a TO-220FP package
Datasheet − production data
Features
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Order code
STF18N65M2
V_DS
650 V
R_DS(on)
max
0.33 Ω
I_D
12 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
AM15572v1
Order code
STF18N65M2
Table 1. Device summary
Marking
Package
18N65M2
TO-220FP
Packaging
Tube
January 2015
This is information on a product in full production.
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